2N6301

2N6301 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N6301

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO-66

Hus: T0-66