SI-N 80V 2A 10W 100MHz TO-126ISO

Type Designator: 2SD1509

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 4000

Noise Figure, dB: -

Package of 2SD1509 transistor: TO-126ISO