SI-N+D 1500V 6A 120W TO-3P

Type Designator: 2SD1399

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 120

Maximum collector-base voltage |Ucb|, V: 1500

Maximum collector-emitter voltage |Uce|, V: 800

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of 2SD1399 transistor: TO-3P