SI-N 1400V 10A 50W TO-3

Type Designator: 2SD1279

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 1400

Maximum collector-emitter voltage |Uce|, V: 600

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 165

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of 2SD1279 transistor: TO3