SI-N 110V 8A 40W 20MHz TO-220

Type Designator: 2SD1196

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 110

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 20

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 2000

Noise Figure, dB: -

Package of 2SD1196 transistor: TO220