SI-N 100V 10A 80W TO-3P

Type Designator: 2SD1187-Y

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF: 350

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of 2SD1187-Y transistor: TO-3P