SI-N 80V 0,7A 0,6W 7MHz TO-92

Type Designator: 2SD1111

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.7

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 7

Collector capacitance (Cc), pF: 190

Forward current transfer ratio (hFE), min: 7000

Noise Figure, dB: -

Package of 2SD1111 transistor: TO92