SI-N 60V 7A 60W 10MHz TO-3P

Type Designator: 2SD1063R

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 60

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 7

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2SD1063R transistor: TO-3P