SI-N 60V 5A 30W 30MHz TO-220

Type Designator: 2SD1060

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF: 100

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SD1060 transistor: TO220