SI-N 50V 0,05A 0,2W TO-236

Type Designator: 2SD1030

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 15

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 400

Noise Figure, dB: -

Package of 2SD1030 transistor: TO236