SI-N 80V 6A 50W TO-220F

Type Designator: 2SD888

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 1000

Noise Figure, dB: -

Package of 2SD888 transistor: TO220F