SI-N 130V 10A 100W 3MHz TO-3

Type Designator: 2SD867

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 130

Maximum collector-emitter voltage |Uce|, V: 110

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 200

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of 2SD867 transistor: TO3