SI-N 350V 0,75A 35W TO-220

Type Designator: 2SD859

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 35

Maximum collector-base voltage |Ucb|, V: 350

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.75

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SD859 transistor: TO220