SI-N 100V 1A 10W 85MHz TO-126

Type Designator: 2SD809

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 85

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 250

Noise Figure, dB: -

Package of 2SD809 transistor: TO126