SI-N 160V 12A 125W 4MHz TO-3

Type Designator: 2SD676A

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 125

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 160

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 12

Maximum junction temperature (Tj), °C: 135

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2SD676A transistor: TO3