SI-N 25V 1A 10W 100MHz TO-126

Type Designator: 2SC612

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 2

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2SC612 transistor: TO-126