SI-N 120V 8A 80W TO-3

Type Designator: 2SD427

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 400

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SD427 transistor: TO3