SI-N 100V 10A 80W TO-3

Type Designator: 2SD411

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 2000

Noise Figure, dB: -

Package of 2SD411 transistor: TO3