SI-N 32V 1A 0,6W TO-1

Type Designator: 2SD352

Material of transistor: Ge

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 32

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 12

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 85

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2SD352 transistor: TO1